arXiv · 0707.3798
Pressure-induced metal-insulator transition in MgV_2O_4
Abstract
On the basis of experimental thermoelectric power results and ab initio calculations, we propose that a metal-insulator transition takes place at high pressure (approximately 6 GPa) in MgV_2O_4.
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D. Baldomir, V. Pardo, S. Blanco-Canosa, F. Rivadulla, J. Rivas, A. Piñeiro, J. E. Arias. 2007-07-25. Pressure-induced metal-insulator transition in MgV_2O_4. https://doi.org/10.1016/j.physb.2007.10.208
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