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arXiv · 0807.3770

General Rule and Materials Design of Negative Effective U System for High-T_c Superconductivity

Hiroshi Katayama-Yoshida·Koichi Kusakabe·Hidetoshi Kizaki·Akitaka Nakanishi
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Abstract

Based on the microscopic mechanisms of (1) charge-excitation-induced negative effective U in s^1 or d^9 electronic configurations, and (2) exchange-correlation-induced negative effective U in d^4 or d^6 electronic configurations, we propose a general rule and materials design of negative effective U system in itinerant (ionic and metallic) system for the realization of high-T_c superconductors. We design a T_c-enhancing layer (or clusters) of charge-excitation-induced negative effective $U$ connecting the superconducting layers for the realistic systems.

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Hiroshi Katayama-Yoshida, Koichi Kusakabe, Hidetoshi Kizaki, Akitaka Nakanishi. 2008-07-24. General Rule and Materials Design of Negative Effective U System for High-T_c Superconductivity. https://doi.org/10.1143/apex.1.081703

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