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arXiv · 0809.3903

Superlattice properties of semiconductor nanohelices in a transverse electric field

O. V. Kibis·M. E. Portnoi
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Abstract

A charge carrier confined in a quasi-one-dimensional semiconductor helical nanostructure in the presence of an electric field normal to the axis of the helix is subjected to a periodic potential proportional to the strength of the field and the helix radius. As a result, electronic properties of such nanohelices are similar to those of semiconductor superlattices with parameters controlled by the applied field. These properties include Bragg scattering of charge carriers by a periodic potential, which results in energy gap opening at the edge of the superlattice Brillouin zone. This provides an opportunity for creating a new class of tunable high-frequency devices based on semiconductor nanohelices.

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O. V. Kibis, M. E. Portnoi. 2008-09-23. Superlattice properties of semiconductor nanohelices in a transverse electric field. https://doi.org/10.1016/j.physe.2007.08.054

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