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Exciton/plasmon polaritons in GaAs/GaAlAs heterostructures near a metallic layer

J. Bellessa·C. Symonds·C. Meynaud·J. C. Plenet·E. Cambril·A. Miard·L. Ferlazzo·A. Lemaitre
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Abstract

We report on the strong coupling between inorganic quantum well excitons and surface plasmons. For that purpose a corrugated silver film was deposited on the top of a heterostructure consisting of GaAs/GaAlAs quantum wells. The formation of plasmon/heavy-hole exciton/light-hole exciton mixed states is demonstrated with reflectometry experiments. The interaction energies amount to 21 meV for the plasmon/light-hole exciton and 22 meV for the plasmon/heavy-hole exciton. Some particularities of the plasmon-exciton coupling were also discussed and qualitatively related to the plasmon polarization.

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J. Bellessa, C. Symonds, C. Meynaud, J. C. Plenet, E. Cambril, A. Miard, L. Ferlazzo, A. Lemaitre. 2008-09-24. Exciton/plasmon polaritons in GaAs/GaAlAs heterostructures near a metallic layer. https://doi.org/10.1103/physrevb.78.205326

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