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arXiv · 0903.1232

Tuning of structure inversion asymmetry by the $\delta$-doping position in (001)-grown GaAs quantum wells

V. Lechner·L. E. Golub·P. Olbrich·S. Stachel·D. Schuh·W. Wegscheider·V. V. Bel'kov·S. D. Ganichev
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Abstract

Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-doping layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-doping position we grow samples with almost equal degrees of structure and bulk inversion asymmetry.

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V. Lechner, L. E. Golub, P. Olbrich, S. Stachel, D. Schuh, W. Wegscheider, V. V. Bel'kov, S. D. Ganichev. 2009-03-06. Tuning of structure inversion asymmetry by the $\delta$-doping position in (001)-grown GaAs quantum wells. https://doi.org/10.1063/1.3156027

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