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arXiv · 0904.0904

Independently switchable atomic quantum transistors by reversible contact reconstruction

F. -Q. Xie·R. Maul·A. Augenstein·Ch. Obermair·E. B. Starikov·G. Schoen·Th. Schimmel·W. Wenzel
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Abstract

The controlled fabrication of actively switchable atomic-scale devices, in particular transistors, has remained elusive to date. Here we explain operation of an atomic-scale three-terminal device by a novel switching mechanism of bistable, self-stabilizing reconstruction of the electrode contacts at the atomic level: While the device is manufactured by electrochemical deposition, it operates entirely on the basis of mechanical effects of the solid-liquid interface. We analyze mechanically and thermally stable metallic junctions with a predefined quantized conductance of 1-5 G_0 in experiment and atomistic simulation. Atomistic modeling of structural and conductance properties elucidates bistable electrode reconstruction as the underlying mechanism of the device. Independent room-temperature operation of two transistors at low voltage demonstrates intriguing perspectives for quantum electronics and logics on the atomic scale.

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F. -Q. Xie, R. Maul, A. Augenstein, Ch. Obermair, E. B. Starikov, G. Schoen, Th. Schimmel, W. Wenzel. 2009-04-06. Independently switchable atomic quantum transistors by reversible contact reconstruction. https://arxiv.org/abs/0904.0904

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