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arXiv · 0906.3274

Resonant structures based on amorphous silicon sub-oxide doped with Er3+ with silicon nanoclusters for an efficient emission at 1550 nm

D. S. L. Figueira·D. Mustafa·L. R. Tessler·N. C. Frateschi
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Abstract

We present a resonant approach to enhance 1550nm emission efficiency of amorphous silicon sub-oxide doped with Er3+ (a-SiOx ) layers with silicon nanoclusters (Si-NC). Two distinct techniques were combined to provide a structure that allowed increasing approximately 12x the 1550nm emission. First, layers of SiO2 were obtained by conventional wet oxidation and a-SiOx matrix was deposited by reactive RF co-sputtering. Secondly, an extra pump channel (4I15/2 to 4I9/2) of Er3+ was created due to Si-NC formation on the same a-SiOx matrix via a hard annealing at 1150 C. The SiO2 and the a-SiOx thicknesses were designed to support resonances near the pumping wavelength (~500nm), near the Si-NC emission (~800nm) and near the a-SiOx emission (~1550nm) enhancing the optical pumping process.

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D. S. L. Figueira, D. Mustafa, L. R. Tessler, N. C. Frateschi. 2009-06-17. Resonant structures based on amorphous silicon sub-oxide doped with Er3+ with silicon nanoclusters for an efficient emission at 1550 nm. https://doi.org/10.1116/1.3246406

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