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arXiv · 0910.2336

Suppressed spin dephasing for 2D and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms

S. Z. Denega·T. Last·J. Liu·A. Slachter·P. J. Rizo·P. H. M. van Loosdrecht·B. J. van Wees·D. Reuter·A. D. Wieck·C. H. van der Wal
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Abstract

We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [110] crystal direction. This is the fingerprint of a suppression that is enhanced due to a strong anisotropy in spin-orbit fields that can occur when the Rashba and Dresselhaus contributions are engineered to cancel each other. A surprising observation is that this mechanisms for suppressing spin dephasing is not only effective for electrons in the heterojunction quantum well, but also for electrons in a deeper bulk layer.

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S. Z. Denega, T. Last, J. Liu, A. Slachter, P. J. Rizo, P. H. M. van Loosdrecht, B. J. van Wees, D. Reuter, A. D. Wieck, C. H. van der Wal. 2010-04-15. Suppressed spin dephasing for 2D and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms. https://doi.org/10.1103/physrevb.81.153302

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