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arXiv · 1005.5686

Compact silicon double and triple dots realized with only two gates

Mathieu Pierre·Romain Wacquez·Benoit Roche·Xavier Jehl·Marc Sanquer·Maud Vinet·Enrico Prati·Matteo Belli·Marco Fanciulli
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Abstract

We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local doping depending on the spacers length. The main characteristics of the triple dot stability diagram are quantitatively fitted.

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Mathieu Pierre, Romain Wacquez, Benoit Roche, Xavier Jehl, Marc Sanquer, Maud Vinet, Enrico Prati, Matteo Belli, Marco Fanciulli. 2010-05-31. Compact silicon double and triple dots realized with only two gates. https://doi.org/10.1063/1.3273857

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