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arXiv · 1007.1755

Hot electron transport in suspended multilayer graphene

Sungbae Lee·Nelka Wijesinghe·Carlos Diaz-Pinto·Haibing Peng
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Abstract

We study hot electron transport in short-channel suspended multilayer graphene devices created by a distinct experimental approach. For devices with semi-transparent contact barriers, a dip of differential conductance (dI/dV) has been observed at source drain bias Vd = 0, along with anomalies at higher Vd likely induced by optical phonon scattering. For devices with low contact barriers, only the dI/dV dip at Vd = 0 is observed, and we find a well-fit logarithmic dependence of dI/dV on both the bias Vd and the temperature T. The logarithmic Vd dependence is explained with the hot electron effect and the logarithmic T dependence could be attributed to the weak-localization in two-dimensions.

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Sungbae Lee, Nelka Wijesinghe, Carlos Diaz-Pinto, Haibing Peng. 2010-07-11. Hot electron transport in suspended multilayer graphene. https://doi.org/10.1103/physrevb.82.045411

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