arXiv · 1007.4433
Simulation and Experimental Study of Plasma Effects in Planar Silicon Sensors
Abstract
In silicon sensors high densities of electron-hole pairs result in a change of the current pulse shape and spatial distribution of the collected charge compared to the situation in presence of low charge carrier densities. This paper presents a detailed comparison of numerical simulations with time resolved current measurements on planar silicon sensors using 660~nm laser light to create different densities of electron hole pairs.
Explore related subjects
Keep this discovery
Julian Becker, Klaus Gärtner, Robert Klanner, Rainer Richter. 2010-07-26. Simulation and Experimental Study of Plasma Effects in Planar Silicon Sensors. https://doi.org/10.1016/j.nima.2010.10.010
Cite the original work for its findings. Save a collection to share your selection of sources.