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arXiv · 1008.1486

Charge Detection in Phosphorus-doped Silicon Double Quantum Dots

A. Rossi·T. Ferrus·G. J. Podd·D. A. Williams
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Abstract

We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electron transistor (SET) patterned in close proximity to the DQD. Measurements performed at 4.2K show step-like behaviour and shifts of the Coulomb Blockade oscillations in the detector's current as the reservoir's potential is swept. By means of a classical capacitance model, we demonstrate that the observed features can be used to detect single-electron tunnelling from, to and within the DQD, as well as to reveal the DQD charge occupancy.

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A. Rossi, T. Ferrus, G. J. Podd, D. A. Williams. 2010-08-09. Charge Detection in Phosphorus-doped Silicon Double Quantum Dots. https://doi.org/10.1063/1.3524490

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