arXiv · 1011.5014
Electric-field Manipulation of the Lande' g Tensor of Holes in In0.5Ga0.5As/GaAs Self-assembled Quantum Dots
Abstract
The effect of an electric field on spin precession in In0.5Ga0.5As/GaAs self-assembled quantum dots is calculated using multiband real-space envelope-function theory. The dependence of the Lande' g tensor on electric fields should permit high-frequency g tensor modulation resonance, as well as direct, nonresonant electric-field control of the hole spin. Subharmonic resonances have also been found in g tensor modulation resonance of the holes, due to the strong quadratic dependence of components of the hole g tensor on the electric field.
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Joseph Pingenot, Craig E. Pryor, Michael E. Flatté. 2010-11-23. Electric-field Manipulation of the Lande' g Tensor of Holes in In0.5Ga0.5As/GaAs Self-assembled Quantum Dots. https://doi.org/10.1103/physrevb.84.195403
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