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arXiv · 1012.1105

A U-shaped bilayer graphene channel transistor with a very high Ion/Ioff ratio

Z. Moktadir·S. A. Boden·A. Ghiass·H. Rutt.·H. Mizuta
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Abstract

A novel graphene transistor architecture is reported. The transistor has a U-shape geometry and was fabricated using a gallium focused ion beam (FIB). The channel conductance was tuned with a back gate. The Ion/Ioff ratio exceeded 10^5.

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Z. Moktadir, S. A. Boden, A. Ghiass, H. Rutt., H. Mizuta. 2010-12-06. A U-shaped bilayer graphene channel transistor with a very high Ion/Ioff ratio. https://arxiv.org/abs/1012.1105

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