Influence of Electron-electron Drag on Piezoresistance of n-Si

I. I. Boiko

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arXiv · 1102.0191

Influence of Electron-electron Drag on Piezoresistance of n-Si

I. I. Boiko

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Abstract

Piezoresistance of n-Si is considered with due regard for inter-valley drag. It is shown that inter-valley drag gains the piezocoefficient and diminishes the mobility. In the region of nondegenerate carriers the effect of drag increases when carrier concentration rises and temperature falls.

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I. I. Boiko. 2011-02-01. Influence of Electron-electron Drag on Piezoresistance of n-Si. https://arxiv.org/abs/1102.0191

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