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arXiv · 1102.1026

On-chip parametric amplification with 26.5~dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides

Bart Kuyken·Stéphane Clemmen·Shankar Kumar Selvaraja·Wim Bogaerts·Dries Van Thourhout·Philippe Emplit·Serge Massar·Gunther Roelkens·Roel Baets
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Abstract

We present the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5~dB at telecom wavelength is reported. Measured nonlinear parameter is 770~$\textrm{W}^{-1} \textrm{m}^{-1}$, nonlinear absorption 28~$\textrm{W}^{-1} \textrm{m}^{-1}$, bandgap $1.61$~eV.

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Bart Kuyken, Stéphane Clemmen, Shankar Kumar Selvaraja, Wim Bogaerts, Dries Van Thourhout, Philippe Emplit, Serge Massar, Gunther Roelkens, Roel Baets. 2011-02-04. On-chip parametric amplification with 26.5~dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides. https://doi.org/10.1364/ol.36.000552

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