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arXiv · 1103.0881

Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking

Marco Battaglia·Dario Bisello·Devis Contarato·Peter Denes·Piero Giubilato·Serena Mattiazzo·Devis Pantano·Sarah Zalusky
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Abstract

This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.

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Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Serena Mattiazzo, Devis Pantano, Sarah Zalusky. 2011-03-04. Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking. https://doi.org/10.1016/j.nima.2011.05.081

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