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arXiv · 1103.2254

Temperature dependencies of the energy and time resolution of silicon drift detectors

B. K. Wuenschek·Y. Fujiwara·T. Hashimoto·R. S. Hayano·M. Iio·S. Ishimoto·T. Ishiwatari·M. Sato·E. Widmann·J. Zmeskal
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Abstract

The response of silicon drift detectors (SDDs), which were mounted together with their preamplifiers inside a vacuum chamber, was studied in a temperature range from 100 K to 200 K. In particular, the energy resolution could be stabilized to about 150 eV at 6 keV between 130 K and 200 K, while the time resolution shows a temperature dependence of T^3 in this temperature range. To keep a variation of the X-ray peak positions within 1 eV, it is necessary to operate the preamplifier within a stability of 1 K around 280 K. A detailed investigation of this temperature influences on SDDs and preamplifiers is presented.

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B. K. Wuenschek, Y. Fujiwara, T. Hashimoto, R. S. Hayano, M. Iio, S. Ishimoto, T. Ishiwatari, M. Sato, E. Widmann, J. Zmeskal. 2011-03-11. Temperature dependencies of the energy and time resolution of silicon drift detectors. https://arxiv.org/abs/1103.2254

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