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arXiv · 1109.6929

Bilayer graphene dual-gate nanodevice: An ab initio simulation

J. E. Padilha·Matheus P. Lima·A. J. R. da Silva·A. Fazzio
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Abstract

We study the electronic transport properties of a dual-gated bilayer graphene nanodevice via first principles calculations. We investigate the electric current as a function of gate length and temperature. Under the action of an external electrical field we show that even for gate lengths up 100 Ang., a non zero current is exhibited. The results can be explained by the presence of a tunneling regime due the remanescent states in the gap. We also discuss the conditions to reach the charge neutrality point in a system free of defects and extrinsic carrier doping.

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J. E. Padilha, Matheus P. Lima, A. J. R. da Silva, A. Fazzio. 2011-09-30. Bilayer graphene dual-gate nanodevice: An ab initio simulation. https://doi.org/10.1103/physrevb.84.113412

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