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arXiv · 1111.0560

Reading and writing charge on graphene devices

M. R. Connolly·E. D. Herbschleb·R. K. Puddy·M. Roy·D. Anderson·G. A. C. Jones·P. Maksym·C. G. Smith
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Abstract

We use a combination of charge writing and scanning gate microscopy to map and modify the local charge neutrality point of graphene field-effect devices. We give a demonstration of the technique by writing remote charge in a thin dielectric layer over the graphene-metal interface and detecting the resulting shift in local charge neutrality point. We perform electrostatic simulations to characterize the gating effect of a realistic scanning probe tip on a graphene bilayer and find a good agreement with the experimental results.

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M. R. Connolly, E. D. Herbschleb, R. K. Puddy, M. Roy, D. Anderson, G. A. C. Jones, P. Maksym, C. G. Smith. 2011-11-02. Reading and writing charge on graphene devices. https://doi.org/10.1063/1.4732802

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