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arXiv · 1111.2151

Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft X-ray Radiation

Marco Battaglia·Dario Bisello·Richard Celestre·Devis Contarato·Peter Denes·Serena Mattiazzo·Craig Tindall
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Abstract

This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer contact is implanted on the back-plane. The response to X-rays from 2.12 up to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source.

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Marco Battaglia, Dario Bisello, Richard Celestre, Devis Contarato, Peter Denes, Serena Mattiazzo, Craig Tindall. 2011-11-09. Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft X-ray Radiation. https://doi.org/10.1016/j.nima.2012.01.054

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