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arXiv · 1111.5430

Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device

A. Bernand-Mantel·P. Seneor·K. Bouzehouane·S. Fusil·C. Deranlot·F. Petroff·A. Fert
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Abstract

We investigate the magneto-transport characteristics of nanospintronics single-electron devices. The devices consist of single non-magnetic nano-objects (nanometer size nanoparticles of Al or Cu) connected to Co ferromagnetic leads. The comparison with simulations allows us attribute the observed magnetoresistance to either spin accumulation or anisotropic magneto-Coulomb effect (AMC), two effects with very different origins. The fact that the two effects are observed in similar samples demonstrates that a careful analysis of Coulomb blockade and magnetoresistance behaviors is necessary in order to discriminate them in magnetic single-electron devices. As a tool for further studies, we propose a simple way to determine if spin transport or AMC effect dominates from the Coulomb blockade I-V curves of the spintronics device.

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A. Bernand-Mantel, P. Seneor, K. Bouzehouane, S. Fusil, C. Deranlot, F. Petroff, A. Fert. 2011-11-23. Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device. https://doi.org/10.1103/physrevb.84.180413

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