Search arXiv⌕ Search

arXiv · 1112.2132

Ultrafast supercontinuum spectroscopy of carrier multiplication and biexcitonic effects in excited states of PbS quantum dots

Abstract

We examine the multiple exciton population dynamics in PbS quantum dots by ultrafast spectrally-resolved supercontinuum transient absorption (SC-TA). We simultaneously probe the first three excitonic transitions over a broad spectral range. Transient spectra show the presence of first order bleach of absorption for the 1S_h-1S_e transition and second order bleach along with photoinduced absorption band for 1P_h-1P_e transition. We also report evidence of the one-photon forbidden 1S_{h,e}-1P_{h,e} transition. We examine signatures of carrier multiplication (multiexcitons for the single absorbed photon) from analysis of the first and second order bleaches, in the limit of low absorbed photon numbers ( ~ 10^-2), at pump energies from two to four times the semiconductor band gap. The multiexciton generation efficiency is discussed both in terms of a broadband global fit and the ratio between early- to long-time transient absorption signals.. Analysis of population dynamics shows that the bleach peak due to the biexciton population is red-shifted respect the single exciton one, indicating a positive binding energy.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

F. Gesuele, M. Y. Sfeir, W. -K. Koh, C. B. Murray, T. F. Heinz, C. W. Wong. 2011-12-09. Ultrafast supercontinuum spectroscopy of carrier multiplication and biexcitonic effects in excited states of PbS quantum dots. https://doi.org/10.1021/nl2021224

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Microscopic Modeling of Surface Roughness Scattering in Inversion Layers of MOSFETs Based on Ando's Linear Model

Surface roughness (SR) scattering in inversion layers of bulk-MOSFETs is studied from the atomistic and quantum-mechanical viewpoints. Contrary to the usual macroscopic landscape of the roughness deviation, we introduce a stochastic deviation at each atomic site to take account of the discontinuity of the spatial derivatives of the electrostatic potential and wave-function at the semiconductor/dielectric interface, leading to an ambiguity in roughness positions. It is shown that SR parameters are consistent with those known from the experiments and, thus, there is no discrepancy problem associated with the roughness parameters in our model. The self-consistent scattering rate is derived under the framework of the Green's functions scheme: We find that the SR scattering rates are intrinsically nonlocal (non-diagonal) with respect to subband indices and greatly deviate from those based on Fermi's golden rule in the regimes of strong effective fields and/or low electron energies. As a result, the conventional SR model tends to underestimate the surface-roughness-limited mobility.

cond-mat.mes-hall↗

Conductance of silicon nanotube junctions in high magnetic fields

We investigate coherent quantum transport through silicon nanotube (SiNT) junctions in high magnetic fields up to 60 T using a tight-binding model combined with the non-equilibrium Green's function formalism, and magnetic field included via Peierls substitution. We consider junctions of metallic nanotubes (6,0)+(6,0) and semiconducting ones (9,9)+(9,9), and examine the effects of the overlap length, inter-tube distance, magnetic-field direction, and field strength on the electronic transmission. In contrast to carbon nanotube junctions, the SiNT systems exhibit irregular transmission oscillations and do not show the emergence of highly conductive gateway states. The transmission is substantially more sensitive to a magnetic field perpendicular to the nanotube axis than to a parallel field, while increasing the field strength progressively modifies the transmission spectrum. Increasing the overlap length results in more frequent transmission oscillations, whereas increasing the inter-tube distance modifies their positions and amplitudes without changing their overall character. Generally, similar trends are observed for both types of junctions, involving metallic and semiconducting nanotubes. However, in the junction of semiconducting nanotubes, one observes peculiar additional field-dependent in-gap transmission features. These results demonstrate that the magnetic-field response of SiNT junctions is strongly governed by their geometry and differs qualitatively from that of pristine carbon nanotube junctions.

cond-mat.mes-hall↗

Quantum Gates Built on a Spin Qubit and a Kitaev Parity Qubit

Spin is typically traced out in the description of quantum-dot-based Kitaev chains to simplify the construction of Majorana fermions. Yet the intrinsic spin structure of poor-man's Majorana modes in minimal Kitaev chains under finite Zeeman fields offers a natural interface for the Kitaev parity qubit to interact with other spinful systems. Here, we establish such a platform to bridge the parity qubit and a quantum-dot spin qubit, with the effective coupling governed by the spin-dependent delocalization of the Majorana modes. Depending on whether the spin qubit is coupled to one or two chains constituting the parity qubit, the parity-spin coupling exhibits distinct forms: an anisotropic parity-conserving exchange interaction or a nontrivial exchange tensor tunable via the interchain superconducting-phase bias. Leveraging fast spin-qubit manipulation, we further demonstrate universal parity-qubit control, high-fidelity qubit-state readout, and entangling operations between the parity and spin qubits. These results turn the spinful structure of poor-man's Majoranas from a finite-field imperfection into a resource for hybrid quantum control.

cond-mat.mes-hall↗