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arXiv · 1201.1439

Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach

M. O. Nestoklon·O. Krebs·H. Jaffrès·S. Ruttala·J. -M. George·J. -M. Jancu·P. Voisin
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Abstract

Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier. Significant anisotropies in both in-plane and out-of-plane geometries are found, resulting from the combination of the large spin-orbit coupling associated with the p-d exchange interaction, cubic anisotropy of heavy-hole dispersion and the low C2v symmetry of the chemical bonds.

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M. O. Nestoklon, O. Krebs, H. Jaffrès, S. Ruttala, J. -M. George, J. -M. Jancu, P. Voisin. 2012-01-06. Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach. https://doi.org/10.1063/1.3683525

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