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arXiv · 1202.3016

Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)

T. Maassen·J. J. van den Berg·N. IJbema·F. Fromm·T. Seyller·R. Yakimova·B. J. van Wees
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Abstract

We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau_S in monolayer graphene, while the spin diffusion coefficient D_S is strongly reduced compared to typical results on exfoliated graphene. The increase of tau_S is probably related to the changed substrate, while the cause for the small value of D_S remains an open question.

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T. Maassen, J. J. van den Berg, N. IJbema, F. Fromm, T. Seyller, R. Yakimova, B. J. van Wees. 2012-02-14. Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001). https://doi.org/10.1021/nl2042497

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