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arXiv · 1204.0956

Electron transport in a ferromagnetic/normal/ferromagnetic tunnel junction based on the surface of a topological insulator

Jian-Hui Yuan·Yan Zhang·Jian-Jun Zhang·Ze Cheng
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Abstract

We theoretically study the electron transport properties in a ferromagnetic/normal/ferromagnetic tunnel junction, which is deposited on the top of a topological surface. The conductance at the parallel (\textbf{P}) configuration can be much bigger than that at the antiparallel (\textbf{AP}) configuration. Compared \textbf{P} with \textbf{AP} configuration, there exists a shift of phase which can be tuned by gate voltage. We find that the exchange field weakly affects the conductance of carriers for \textbf{P} configuration but can dramatically suppress the conductance of carriers for \textbf{AP} configuration. This controllable electron transport implies anomalous magnetoresistance in this topological spin valve, which may contribute to the development of spintronics . In addition, we find that there is a Fabry-Perot-like electron interference.

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Jian-Hui Yuan, Yan Zhang, Jian-Jun Zhang, Ze Cheng. 2012-04-04. Electron transport in a ferromagnetic/normal/ferromagnetic tunnel junction based on the surface of a topological insulator. https://doi.org/10.1140/epjb/e2012-30508-1

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