Physical insight into reduced surface roughness scattering in strained silicon inversion layers

Abstract

A seemingly anomalous enhancement of electron mobility in strained silicon inversion layers at high sheet densities has exposed a conspicuous gap between device physics theory and experiment in recent years. We show that the root of this discrepancy is due to a bulging effect in the electron Δ4 wavefunction at the silicon surface. This renders Δ4 electrons more susceptible to perturbations in surface structure thereby increasing surface roughness scattering for these states. Strain engineering utilized by the CMOS industry reduces the relative occupancy of the Δ4 states resulting in less overall surface roughness scattering in the channel. We show that the origin of this effect can be explained by moving beyond the effective mass approximation and contrasting the properties of the Δ2 and Δ4 wavefunctions in a representation that comprehends full crystal and Bloch state symmetry.