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arXiv · 1209.0677

Photoresponse of a strongly correlated material determined by scanning photocurrent microscopy

T. Serkan Kasirga·Dong Sun·Jae H. Park·Jim M. Coy·Zaiyao Fei·Xiaodong Xu·David H. Cobden
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Abstract

The generation of a current by light is a key process in optoelectronic and photovoltaic devices. In band semiconductors, depletion fields associated with interfaces separate long-lived photo-induced carriers. However, in systems with strong electron-electron and electron-phonon correlations it is unclear what physics will dominate the photoresponse. Here we investigate photocurrent in a vanadium dioxide, an exemplary strongly correlated material known for its dramatic metal-insulator transition (MIT) at Tc = 68 C which could be useful for optoelectronic detection and switching up to ultraviolet wavelengths. Using scanning photocurrent microscopy (SPCM) on individual suspended VO2 nanobeams we observe photoresponse peaked at the metal-insulator boundary but extended throughout both insulating and metallic phases. We determine that the response is photo-thermal, implying efficient carrier relaxation to a local equilibrium in a manner consistent with strong correlations. Temperature dependent measurements reveal subtle phase changes within the insulating state. We further demonstrate switching of the photocurrent by optical control of the metal-insulator boundary arrangement. Our work shows the value of SPCM applied to nanoscale crystals for investigating strongly correlated materials, and the results are relevant for designing and controlling optoelectronic devices employing such materials.

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T. Serkan Kasirga, Dong Sun, Jae H. Park, Jim M. Coy, Zaiyao Fei, Xiaodong Xu, David H. Cobden. 2012-09-05. Photoresponse of a strongly correlated material determined by scanning photocurrent microscopy. https://arxiv.org/abs/1209.0677

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