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arXiv · 1301.6026

Technique for Magnetic Susceptibility Determination in the High Doped Semiconductors by Electron Spin Resonance

A. I. Veinger·A. G. Zabrodskii·T. V. Tisnek·S. I. Goloshchapov·P. V. Semenikhin
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Abstract

Method for determining the magnetic susceptibility in the high doped semiconductors is considered. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic doped germanium samples at a rather high concentration corresponding to the insulator metal phase transition.

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A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, S. I. Goloshchapov, P. V. Semenikhin. 2013-01-25. Technique for Magnetic Susceptibility Determination in the High Doped Semiconductors by Electron Spin Resonance. https://doi.org/10.1063/1.4893521

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