Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon

P. C. Spruijtenburg; J. Ridderbos; F. Mueller; A. W. Leenstra; M. Brauns; A. A. I. Aarnink; W. G. van der Wiel; F. A. Zwanenburg

doi:10.1063/1.4804555

arXiv · 1304.2870

Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon

P. C. Spruijtenburg·J. Ridderbos·F. Mueller·A. W. Leenstra·M. Brauns·A. A. I. Aarnink·W. G. van der Wiel·F. A. Zwanenburg

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Abstract

In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$ using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET turn-on and pinch-off characteristics. Additionally, linear transport measurements at 4 K result in regularly spaced Coulomb oscillations, corresponding to single-hole tunneling through individual Coulomb islands. These Coulomb peaks are visible over a broad range in gate voltage, indicating very stable device operation. Energy spectroscopy measurements show closed Coulomb diamonds with single-hole charging energies of 5--10 meV, and lines of increased conductance as a result of resonant tunneling through additional available hole states.

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P. C. Spruijtenburg, J. Ridderbos, F. Mueller, A. W. Leenstra, M. Brauns, A. A. I. Aarnink, W. G. van der Wiel, F. A. Zwanenburg. 2013-04-17. Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon. https://doi.org/10.1063/1.4804555

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