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arXiv · 1306.2937

High Q SiC microresonators

Jaime Cardenas·Mian Zhang·Christopher T. Phare·Shreyas Y. Shah·Carl B. Poitras·Michal Lipson
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Abstract

We demonstrate photonic devices based on standard 3C SiC epitaxially grown on silicon. We achieve high optical confinement by taking advantage of the high stiffness of SiC and undercutting the underlying silicon substrate. We demonstrate a 20 um radius suspended microring resonator with Q of 18000 fabricated on commercially available SiC-on-silicon substrates.

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Jaime Cardenas, Mian Zhang, Christopher T. Phare, Shreyas Y. Shah, Carl B. Poitras, Michal Lipson. 2013-06-12. High Q SiC microresonators. https://doi.org/10.1364/oe.21.016882

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