Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit

P. Stoliar; P. Levy; M. J. Sánchez; A. G. Leyva; C. A. Albornoz; F. Gomez-Marlasca; A. Zanini; C. Toro Salazar; N. Ghenzi; M. J. Rozenberg

arXiv · 1310.3613

Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit

P. Stoliar·P. Levy·M. J. Sánchez·A. G. Leyva·C. A. Albornoz·F. Gomez-Marlasca·A. Zanini·C. Toro Salazar·N. Ghenzi·M. J. Rozenberg

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Abstract

We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS-device to an arbitrary value. Our MLC system demonstrates that transition metal oxide non-volatile memories may compete with the currently available MLCs.

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P. Stoliar, P. Levy, M. J. Sánchez, A. G. Leyva, C. A. Albornoz, F. Gomez-Marlasca, A. Zanini, C. Toro Salazar, N. Ghenzi, M. J. Rozenberg. 2013-10-14. Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit. https://arxiv.org/abs/1310.3613

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