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arXiv · 1403.6040

Radiation Emission by Electrons Channeling in Bent Silicon Crystals

R G Polozkov·V K Ivanov·G B Sushko·Andrey V Korol·Andrey V Solov'yov
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Abstract

Results of numerical simulations of electron channeling and emission spectra are reported for straight and uniformly bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer package [2,3]. The electron channeling along Si(110) crystallographic planes is studied for the projectile energy 855 MeV.

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R G Polozkov, V K Ivanov, G B Sushko, Andrey V Korol, Andrey V Solov'yov. 2014-03-24. Radiation Emission by Electrons Channeling in Bent Silicon Crystals. https://arxiv.org/abs/1403.6040

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