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arXiv · 1407.6096

Multiscale model for phonon-assisted band-to-band tunneling in semiconductors

Arvind Ajoy·S. E. Laux·Kota V. R. M. Murali·S. Karmalkar
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Abstract

We present a TCAD compatible multiscale model of phonon-assisted band-to-band tunneling (BTBT) in semiconductors, that incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture the measured current-voltage data in silicon, for current transport along the $[100]$, $[110]$ and $[111]$ directions. Our model will be useful to predict band-to-band tunneling phenomena to quantify on and off currents in Tunnel FETs and in small geometry MOSFETs and FINFETs.

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Arvind Ajoy, S. E. Laux, Kota V. R. M. Murali, S. Karmalkar. 2014-07-23. Multiscale model for phonon-assisted band-to-band tunneling in semiconductors. https://doi.org/10.1063/1.4790628

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