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arXiv · 1411.4712

Compact Stabilized Semiconductor Laser for Frequency Metrology

W. Liang·V. S. Ilchenko·D. Eliyahu·E. Dale·A. A. Savchenkov·D. Seidel·A. B. Matsko·L. Maleki
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Abstract

We report on the development of a frequency modulatable 795 nm semiconductor laser based on self-injection locking to a high quality factor whispering gallery mode microresonator. The laser is characterized with residual amplitude modulation below -80 dB and frequency noise better than 300 Hz/Hz^(1/2) at offset frequencies ranging from 100 Hz to 10 MHz. The frequency modulation (FM) speed and span of the laser exceed 1 MHz and 4 GHz, respectively. Locking of the laser to Doppler-free saturated absorption resonance of 87Rb D1 line is demonstrated and frequency stability below 10^(-12) is measured for integration time spanning from 1 s to 1 day. The architecture demonstrated in this study is suitable for realization of frequency modulatable lasers at any wavelength.

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W. Liang, V. S. Ilchenko, D. Eliyahu, E. Dale, A. A. Savchenkov, D. Seidel, A. B. Matsko, L. Maleki. 2014-11-18. Compact Stabilized Semiconductor Laser for Frequency Metrology. https://doi.org/10.1364/ao.54.003353

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