Control and generation of localized pulses in passively mode-locked semiconductor lasers

M. Marconi; J. Javaloyes; P. Camelin; D. Chaparro; S. Balle; M. Giudici

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arXiv · 1501.07821

Control and generation of localized pulses in passively mode-locked semiconductor lasers

M. Marconi·J. Javaloyes·P. Camelin·D. Chaparro·S. Balle·M. Giudici

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Abstract

We show experimentally and theoretically that localized pulses can be generated from an electrically biased $200\,μ$m multi-transverse mode Vertical-Cavity Surface-Emitting Laser. The device is passively mode-locked using optical feedback from a distant Resonant Saturable Absorber Mirror and it is operated below threshold. We observe multistability between the off solution and a large variety of pulsating solutions with different number and arrangements of pulses per round-trip, thus indicating that the mode-locked pulses are localized, i.e. mutually independent. We show that a modulation of the bias current allows controlling the number of the pulses travelling within the cavity, thus suggesting that our system can be operated as an arbitrary pattern generator of 10 ps pulses and 1 W peak power.

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M. Marconi, J. Javaloyes, P. Camelin, D. Chaparro, S. Balle, M. Giudici. 2015-01-30. Control and generation of localized pulses in passively mode-locked semiconductor lasers. https://arxiv.org/abs/1501.07821

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