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arXiv · 1503.02686

Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy

J. F. Xu·S. W. Liu·M. Xiao·P. M. Thibado
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Abstract

GaMnAs/GaAs films were grown via molecular beam epitaxy using both low and high substrate temperatures. The films were investigated using Hall effect and photoluminescence (PL) measurements from 8 to 300 K. The carrier concentrations in the samples grown at a low substrate temperature are greater than those in the samples grown at a high substrate temperature. The PL spectra show a GaAs exciton peak, a peak involving a carbon acceptor, a substitutional Mn acceptor-related peak and an optical phonon-related peak.

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J. F. Xu, S. W. Liu, M. Xiao, P. M. Thibado. 2015-03-09. Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy. https://doi.org/10.1016/j.jcrysgro.2006.11.049

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