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arXiv · 1504.04989

Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short and mid-wavelength infrared regions

C. B. Lim·M. Beeler·A. Ajay·J. Lähnemann·E. Bellet-Amalric·C. Bougerol·E. Monroy
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Abstract

This paper assesses nonpolar m- and a-plane GaN/Al(Ga)N multi-quantum-wells grown on bulk GaN for intersubband optoelectronics in the short- and mid-wavelength infrared ranges. The characterization results are compared to those for reference samples grown on the polar c-plane, and are verified by self-consistent Schrödinger-Poisson calculations. The best results in terms of mosaicity, surface roughness, photoluminescence linewidth and intensity, as well as intersubband absorption are obtained from m-plane structures, which display room-temperature intersubband absorption in the range from 1.5 to 2.9 um. Based on these results, a series of m-plane GaN/AlGaN multi-quantum-wells were designed to determine the accessible spectral range in the mid-infrared. These samples exhibit tunable room-temperature intersubband absorption from 4.0 to 5.8 um, the long-wavelength limit being set by the absorption associated with the second order of the Reststrahlen band in the GaN substrates.

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C. B. Lim, M. Beeler, A. Ajay, J. Lähnemann, E. Bellet-Amalric, C. Bougerol, E. Monroy. 2015-04-20. Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short and mid-wavelength infrared regions. https://doi.org/10.1063/1.4926423

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