arXiv · 1506.02467
Atom transistor from the point of view of quantum nonequilibrium dynamics
Abstract
We analyze the atom field-effect transistor scheme [J. A. Stickney, D. Z. Anderson and A. A. Zozulya, Phys. Rev. A 75, 013608 (2007)] using the standard tools of nonequlilibrium dynamics. In particular, we study the deviations from the Eigenstate Thermalization Hypothesis, quantum fluctuations, and the density of states, both ab initio and using their mean-field analogues. Having fully established the quantum vs. mean-field correspondence for this system, we attempt, using a mean-field model, to interpret the off-on threshold in our transistor as the onset of ergodicity---a point where the system becomes able to visit the thermal values of the former integrals of motion in principle, albeit not being fully thermalized yet.
Explore related subjects
Keep this discovery
Zhedong Zhang, Vanja Dunjko, Maxim Olshanii. 2015-06-08. Atom transistor from the point of view of quantum nonequilibrium dynamics. https://arxiv.org/abs/1506.02467
Cite the original work for its findings. Save a collection to share your selection of sources.