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arXiv · 1507.00864

Development of SOI pixel detector in Cracow

Szymon Bugiel·Roma Dasgupta·Sebastian Glab·Marek Idzik·Jakub Moron·Piotr Julian Kapusta·Wojciech Kucewicz·Michal Turala
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Abstract

This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in $200~nm$ SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionizing particle (MIP) tracking in particle physics experiments. For this reason few different versions of pixel cells are developed: a source-follower based pixel for tracking, a low noise pixel with preamplifier for spectroscopy, and a self-triggering pixel for time and amplitude measurements. In addition the design of a Successive Approximation Register Analog-to-Digital Converter (SAR ADC) is also presented. A 10-bit SAR ADC is developed for spectroscopic measurements and a lower resolution 6-bit SAR ADC is integrated in the pixel matrix as a column ADC, for tracking applications.

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Szymon Bugiel, Roma Dasgupta, Sebastian Glab, Marek Idzik, Jakub Moron, Piotr Julian Kapusta, Wojciech Kucewicz, Michal Turala. 2015-07-03. Development of SOI pixel detector in Cracow. https://arxiv.org/abs/1507.00864

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