Search arXiv⌕ Search
Home/Archive/arXiv

arXiv · 1510.03910

Synthetic dimensions in integrated photonics: From optical isolation to 4D quantum Hall physics

Tomoki Ozawa·Hannah M. Price·Nathan Goldman·Oded Zilberberg·Iacopo Carusotto
View original source ↗Read source document ↗Export metadata ↓

Abstract

Recent technological advances in integrated photonics have spurred on the study of topological phenomena in engineered bosonic systems. Indeed, the controllability of silicon ring-resonator arrays has opened up new perspectives for building lattices for photons with topologically nontrivial bands and integrating them into photonic devices for practical applications. Here, we push these developments even further by exploiting the different modes of a silicon ring resonator as an extra dimension for photons. Tunneling along this synthetic dimension is implemented via an external time-dependent modulation that allows for the generation of engineered gauge fields. We show how this approach can be used to generate a variety of exciting topological phenomena in integrated photonics, ranging from a topologically-robust optical isolator in a spatially one-dimensional (1D) ring-resonator chain to a driven-dissipative analog of the 4D quantum Hall effect in a spatially 3D resonator lattice. Our proposal paves the way towards the use of topological effects in the design of novel photonic lattices supporting many frequency channels and displaying higher connectivities.

Explore related subjects

cond-mat.mes-hallcond-mat.quant-gasphysics.optics

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Tomoki Ozawa, Hannah M. Price, Nathan Goldman, Oded Zilberberg, Iacopo Carusotto. 2016-04-23. Synthetic dimensions in integrated photonics: From optical isolation to 4D quantum Hall physics. https://doi.org/10.1103/physreva.93.043827

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Microscopic Modeling of Surface Roughness Scattering in Inversion Layers of MOSFETs Based on Ando's Linear Model

Surface roughness (SR) scattering in inversion layers of bulk-MOSFETs is studied from the atomistic and quantum-mechanical viewpoints. Contrary to the usual macroscopic landscape of the roughness deviation, we introduce a stochastic deviation at each atomic site to take account of the discontinuity of the spatial derivatives of the electrostatic potential and wave-function at the semiconductor/dielectric interface, leading to an ambiguity in roughness positions. It is shown that SR parameters are consistent with those known from the experiments and, thus, there is no discrepancy problem associated with the roughness parameters in our model. The self-consistent scattering rate is derived under the framework of the Green's functions scheme: We find that the SR scattering rates are intrinsically nonlocal (non-diagonal) with respect to subband indices and greatly deviate from those based on Fermi's golden rule in the regimes of strong effective fields and/or low electron energies. As a result, the conventional SR model tends to underestimate the surface-roughness-limited mobility.

cond-mat.mes-hall↗
arXiv2026

Conductance of silicon nanotube junctions in high magnetic fields

We investigate coherent quantum transport through silicon nanotube (SiNT) junctions in high magnetic fields up to 60 T using a tight-binding model combined with the non-equilibrium Green's function formalism, and magnetic field included via Peierls substitution. We consider junctions of metallic nanotubes (6,0)+(6,0) and semiconducting ones (9,9)+(9,9), and examine the effects of the overlap length, inter-tube distance, magnetic-field direction, and field strength on the electronic transmission. In contrast to carbon nanotube junctions, the SiNT systems exhibit irregular transmission oscillations and do not show the emergence of highly conductive gateway states. The transmission is substantially more sensitive to a magnetic field perpendicular to the nanotube axis than to a parallel field, while increasing the field strength progressively modifies the transmission spectrum. Increasing the overlap length results in more frequent transmission oscillations, whereas increasing the inter-tube distance modifies their positions and amplitudes without changing their overall character. Generally, similar trends are observed for both types of junctions, involving metallic and semiconducting nanotubes. However, in the junction of semiconducting nanotubes, one observes peculiar additional field-dependent in-gap transmission features. These results demonstrate that the magnetic-field response of SiNT junctions is strongly governed by their geometry and differs qualitatively from that of pristine carbon nanotube junctions.

cond-mat.mes-hall↗
arXiv2026

Quantum Gates Built on a Spin Qubit and a Kitaev Parity Qubit

Spin is typically traced out in the description of quantum-dot-based Kitaev chains to simplify the construction of Majorana fermions. Yet the intrinsic spin structure of poor-man's Majorana modes in minimal Kitaev chains under finite Zeeman fields offers a natural interface for the Kitaev parity qubit to interact with other spinful systems. Here, we establish such a platform to bridge the parity qubit and a quantum-dot spin qubit, with the effective coupling governed by the spin-dependent delocalization of the Majorana modes. Depending on whether the spin qubit is coupled to one or two chains constituting the parity qubit, the parity-spin coupling exhibits distinct forms: an anisotropic parity-conserving exchange interaction or a nontrivial exchange tensor tunable via the interchain superconducting-phase bias. Leveraging fast spin-qubit manipulation, we further demonstrate universal parity-qubit control, high-fidelity qubit-state readout, and entangling operations between the parity and spin qubits. These results turn the spinful structure of poor-man's Majoranas from a finite-field imperfection into a resource for hybrid quantum control.

cond-mat.mes-hall↗