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arXiv · 1603.07499

Low-temperature quantum transport in CVD-grown single crystal graphene

Shaohua Xiang·Vaidotas Miseikis·Luca Planat·Stefano Guiducci·Stefano Roddaro·Camilla Coletti·Fabio Beltram·Stefan Heun
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Abstract

Chemical vapor deposition (CVD) has been proposed for large-scale graphene synthesis for practical applications. However, the inferior electronic properties of CVD graphene are one of the key problems to be solved. In this study, we present a detailed study on the electronic properties of high-quality single crystal monolayer graphene. The graphene is grown by CVD on copper using a cold-wall reactor and then transferred to Si/SiO2. Our low-temperature magneto-transport data demonstrate that the characteristics of the measured single-crystal CVD graphene samples are superior to those of polycrystalline graphene and have a quality which is comparable to that of exfoliated graphene on Si/SiO2. The Dirac point in our best samples is located at back-gate voltages of less than 10V, and their mobility can reach 11000 cm2/Vs. More than 12 flat and discernible half-integer quantum Hall plateaus have been observed in high magnetic field on both the electron and hole side of the Dirac point. At low magnetic field, the magnetoresistance shows a clear weak localization peak. Using the theory of McCann et al., we find that the inelastic scattering length is larger than 1 μm in these samples even at the charge neutrality point.

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Shaohua Xiang, Vaidotas Miseikis, Luca Planat, Stefano Guiducci, Stefano Roddaro, Camilla Coletti, Fabio Beltram, Stefan Heun. 2016-03-24. Low-temperature quantum transport in CVD-grown single crystal graphene. https://doi.org/10.1007/s12274-016-1075-0

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