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arXiv · 1604.02940

Topological phase transition and quantum spin Hall edge states of antimony few layers

Sung Hwan Kim·Kyung-Hwan Jin·Joonbum Park·Jun Sung Kim·Seung-Hoon Jhi·Han Woong Yeom
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Abstract

While two-dimensional topological insulators (2D TI) initiated the field of topological materials, only very few materials were discovered to date and the direct access to their quantum spin Hall edge states has been challenging due to material issues. Here, we introduce a new 2D TI material, Sb few layer films. Electronic structures of ultrathin Sb islands grown on Bi2Te2Se are investigated by scanning tunneling microscopy. The maps of local density of states clearly identify robust edge electronic states over the thickness of three bilayers in clear contrast to thinner islands. This indicates the topological edge states emerged through a 2D topological phase transition predicted between three and four bilayer films in recent theory. The non-trivial phase transition and edge states are confirmed for epitaxial films by extensive density-functional-theory calculations. This work provides an important material platform to exploit miscroscopic aspects of the quantum spin Hall phase and its quantum phase transition.

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Sung Hwan Kim, Kyung-Hwan Jin, Joonbum Park, Jun Sung Kim, Seung-Hoon Jhi, Han Woong Yeom. 2016-04-11. Topological phase transition and quantum spin Hall edge states of antimony few layers. https://arxiv.org/abs/1604.02940

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