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arXiv · 1607.03190

Refractory period of an excitable semiconductor laser with optical injection

Bruno Garbin·Axel Dolcemascolo·Franco Prati·Julien Javaloyes·Giovanna Tissoni·Stéphane Barland
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Abstract

Injection-locked semiconductor lasers can be brought to a neuron-like excitable regime when parameters are set close to the unlocking transition. Here we study experimentally the response of this system to repeated optical perturbations and observe the existence of a refractory period during which perturbations are not able to elicit an excitable response. The results are analyzed via simulations of a set of dynamical equations which reproduced adequately the experimental results.

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Bruno Garbin, Axel Dolcemascolo, Franco Prati, Julien Javaloyes, Giovanna Tissoni, Stéphane Barland. 2016-07-11. Refractory period of an excitable semiconductor laser with optical injection. https://doi.org/10.1103/physreve.95.012214

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