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arXiv · 1607.08677

Dephasing in strongly anisotropic black phosphorus

N. Hemsworth·V. Tayari·F. Telesio·S. Xiang·S. Roddaro·M. Caporali·A. Ienco·M. Serrano-Ruiz·M. Peruzzini·G. Gervais·T. Szkopek·S. Heun
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Abstract

Weak localization was observed and determined in a black phosphorus (bP) field-effect transistor 65 nm thick. The weak localization behaviour was found to be in excellent agreement with the Hikami-Larkin-Nagaoka model for fields up to 1~T, from which characteristic scattering lengths could be inferred. The dephasing length $L_\phi$ was found to increase linearly with increasing hole density attaining a maximum value of 55 nm at a hole density of approximately $10^{13} cm^{-2}$ inferred from the Hall effect. The temperature dependence of $L_\phi$ was also investigated and above 1~K, it was found to decrease weaker than the $L_\phi \propto T^{-\frac{1}{2}}$ dependence characteristic of electron-electron scattering in the presence of elastic scattering in two dimensions. Rather, the observed power law was found to be close to that observed previously in other quasi-one-dimensional systems such as metallic nanowires and carbon nanotubes. We attribute our result to the crystal structure of bP which host a `puckered' honeycomb lattice forming a strongly anisotropic medium

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N. Hemsworth, V. Tayari, F. Telesio, S. Xiang, S. Roddaro, M. Caporali, A. Ienco, M. Serrano-Ruiz, M. Peruzzini, G. Gervais, T. Szkopek, S. Heun. 2016-07-29. Dephasing in strongly anisotropic black phosphorus. https://doi.org/10.1103/physrevb.94.245404

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