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arXiv · 1611.02722

Ballistic quantum transport through Ge/Si core/shell nanowires

D. Kotekar-Patil·B. -M. Nguyen·J. Yoo·S. A. Dayeh·S. M. Frolov
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Abstract

We study ballistic hole transport through Ge/Si core/shell nanowires at low temperatures. We observe Fabry-P$\acute{e}$rot interference patterns as well as conductance plateaus at integer multiples of 2e$^2$/h at zero magnetic field. Magnetic field evolution of these plateaus reveals large effective Land$\acute{e}$ g-factors. Ballistic effects are observed in nanowires with silicon shell thicknesses of 1 - 3 nm, but not in bare germanium wires. These findings inform the future development of spin and topological quantum devices which rely on ballistic subband-resolved transport.

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D. Kotekar-Patil, B. -M. Nguyen, J. Yoo, S. A. Dayeh, S. M. Frolov. 2016-11-08. Ballistic quantum transport through Ge/Si core/shell nanowires. https://doi.org/10.1088/1361-6528%2Faa7f82

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