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arXiv · 1612.00935

Micro-engineered CH$_3$NH$_3$PbI$_3$ nanowire/graphene phototransistor for low intensity light detection at room temperature

M. Spina·M. Lehmann·B. Náfrádi·L. Bernard·E. Bonvin·R. Gaál·A. Magrez·L. Forró·E. Horváth
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Abstract

Methylammonium lead iodide perovskite has revolutionized the field of third generation solid-state solar cells leading to simple solar cell structures1 and certified efficiencies up to 20.1%. Recently the peculiar light harvesting properties of organometal halide perovskites have been exploited in photodetectors where responsivities of ~3.5 A/W and 180 A/W have been respectively achieved for pure perovskite-based devices and hybrid nanostructures. Here, we report on the first hybrid phototransistors where the performance of a network of photoactive Methylammonium Lead Iodide nanowires (hereafter MAPbI$_3$NW) are enhanced by CVD-grown monolayer graphene. These devices show responsivities as high as ~2.6x10$^6$ A/W in the visible range showing potential as room-temperature single-electron detector.

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M. Spina, M. Lehmann, B. Náfrádi, L. Bernard, E. Bonvin, R. Gaál, A. Magrez, L. Forró, E. Horváth. 2016-12-03. Micro-engineered CH$_3$NH$_3$PbI$_3$ nanowire/graphene phototransistor for low intensity light detection at room temperature. https://doi.org/10.1002/smll.201501257

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