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arXiv · 1702.04093

Gate-tunable strong-weak localization transition in few-layer black phosphorus

Gen Long·Shuigang Xu·Xiangbin Cai·Zefei Wu·Tianyi Han·Jiangxiazi Lin·Yuanwei Wang·Liheng An·Yuan Cai·Xinran Wang·Ning Wang
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Abstract

Atomically thin black phosphorus (BP) field-effect transistors show strong-weak localization transition which is tunable through gate voltages. Hopping transports through charge impurity induced localized states are measured at low-carrier density regime. Variable-range hopping model is applied to simulate the charge carrier scattering behavior. In the high-carrier concentration regime, a negative magnetoresistance signals the weak localization effect. The extracted phase coherence length is power-law temperature dependent ($\sim T^{-0.48\pm0.03}$) and demonstrates electron-electron interactions in few-layer BP. The competition between the Strong localization length and phase coherence length is proposed and discussed based on the observed gate tunable strong-weak localization transition in few-layer BP.

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Gen Long, Shuigang Xu, Xiangbin Cai, Zefei Wu, Tianyi Han, Jiangxiazi Lin, Yuanwei Wang, Liheng An, Yuan Cai, Xinran Wang, Ning Wang. 2017-02-14. Gate-tunable strong-weak localization transition in few-layer black phosphorus. https://doi.org/10.1088/1361-6528/aa9bc1

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