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arXiv · 1703.05177

Quantum Transport in Ambipolar Few-layer Black Phosphorus

Gen Long·Denis Maryenko·Sergio Pezzini·Shuigang Xu·Zefei Wu·Tianyi Han·Jiangxiazi Lin·Yuanwei Wang·Liheng An·Chun Cheng·Yuan Cai·Uli Zeitler·Ning Wang
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Abstract

Few-layer black phosphorus possesses unique electronic properties giving rise to distinct quantum phenomena and thus offers a fertile platform to explore the emergent correlation phenomena in low dimensions. A great progress has been demonstrated in improving the quality of hole-doped few-layer black phosphorus and its quantum transport studies, whereas the same achievements are rather modest for electron-doped few-layer black phosphorus. Here, we report the ambipolar quantum transport in few-layer black phosphorus exhibiting undoubtedly the quantum Hall effect for hole transport and showing clear signatures of the quantum Hall effect for electron transport. By bringing the spin-resolved Landau levels of the electron-doped black phosphorus to the coincidence, we measure the spin susceptibility $χ_s=m^\ast g^\ast=1.1\pm0.03$. This value is larger than for hole-doped black phosphorus and illustrates an energetically equidistant arrangement of spin-resolved Landau levels. Evidently, the n-type black phosphorus offers a unique platform with equidistant sequence of spin-up and spin-down states for exploring the quantum spintronic.

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Gen Long, Denis Maryenko, Sergio Pezzini, Shuigang Xu, Zefei Wu, Tianyi Han, Jiangxiazi Lin, Yuanwei Wang, Liheng An, Chun Cheng, Yuan Cai, Uli Zeitler, Ning Wang. 2017-03-29. Quantum Transport in Ambipolar Few-layer Black Phosphorus. https://doi.org/10.1103/physrevb.96.155448

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