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arXiv · 1704.05298

Test of Ultra Fast Silicon Detectors for Picosecond Time Measurements with a New Multipurpose Read-Out Board

Nicola Minafra·Hussein Al Ghoul·Roberta Arcidiacono·Nicolo Cartiglia·Laurent Forthomme·Roberto Mulargia·Maria Obertino·Christophe Royon
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Abstract

Ultra Fast Silicon Detectors (UFSD) are sensors optimized for timing measurements employing a thin multiplication layer to increase the output signal. A multipurpose read-out board hosting a low-cost, low-power fast amplifier was designed at the University of Kansas and tested at the European Organization for Nuclear Research (CERN) using a 180 GeV pion beam. The amplifier has been designed to read out a wide range of detectors and it was optimized in this test for the UFSD output signal. In this paper we report the results of the experimental tests using 50 $\rm{μm}$ thick UFSD with a sensitive area of 1.4 $\rm{mm^2}$. A timing precision below 30 ps was achieved.

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Nicola Minafra, Hussein Al Ghoul, Roberta Arcidiacono, Nicolo Cartiglia, Laurent Forthomme, Roberto Mulargia, Maria Obertino, Christophe Royon. 2017-04-26. Test of Ultra Fast Silicon Detectors for Picosecond Time Measurements with a New Multipurpose Read-Out Board. https://doi.org/10.1016/j.nima.2017.04.032

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